| Stage | Description | Key participants |
|---|---|---|
| 1 Committed capex | $700B+ 2026 run rate, 7× 2018 levels. Contractually committed via POs and 10-Q guidance. | Amazon, Google, Meta, Microsoft |
| 2 Datacenter build | AI accelerator demand, power delivery, cooling infrastructure. | NVIDIA H/B-series, Broadcom, AMD |
| 3 Memory + logic + networking | HBM3E/HBM4 stacking, advanced logic (N3/N2), high-speed switching. | SK Hynix, Samsung, Micron, TSMC |
| 4 Wafer starts | Leading-edge fab operations: EUV patterning, advanced packaging, etch, CVD. | TSMC, Samsung, Intel |
| 5 Chemistry layer
The gating stage
|
10 specialty chemicals. Sub-$5B producers. Non-substitutable. 18–36 month qualification cycles. | 12N HF, NF₃, EUV resist, PAG, ABF resin, spherical silica, CNT pellicle, LiPF₆, PFPE, UF₆ |